Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlor
Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.
show moreshow less

Download full text files

Export metadata

  • Export Bibtex
  • Export RIS

Additional Services

    Share in Twitter Search Google Scholar
Metadaten
Author:Wolfgang Molnar, Alois Lugstein, Tomasz Wojcik, Peter Pongratz, Norbert Auner, Christian Bauch, Emmerich Bertagnolli
URN:urn:nbn:de:hebis:30:3-277787
DOI:http://dx.doi.org/10.3762/bjnano.3.65
ISSN:2190-4286
Parent Title (English):Beilstein journal of nanotechnology
Publisher:Beilstein-Institut zur Förderung der Chemischen Wissenschaften
Place of publication:Frankfurt, M.
Document Type:Article
Language:English
Date of Publication (online):2012/07/31
Date of first Publication:2012/07/31
Publishing Institution:Univ.-Bibliothek Frankfurt am Main
Release Date:2012/12/13
Tag:chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon nanowires; vapor–liquid–solid mechanism
Volume:3
Pagenumber:6
First Page:564
Last Page:569
Note:
This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Institutes:Biochemie und Chemie
Dewey Decimal Classification:540 Chemie und zugeordnete Wissenschaften
620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Sammlungen:Universitätspublikationen
Licence (German):License LogoCreative Commons - Namensnennung 2.0

$Rev: 11761 $