Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor
Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of  and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be  oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.
|Author:||Wolfgang Molnar, Alois Lugstein, Tomasz Wojcik, Peter Pongratz, Norbert Auner, Christian Bauch, Emmerich Bertagnolli|
|Parent Title (English):||Beilstein journal of nanotechnology|
|Publisher:||Beilstein-Institut zur Förderung der Chemischen Wissenschaften|
|Place of publication:||Frankfurt, M.|
|Date of Publication (online):||31.07.2012|
|Date of first Publication:||31.07.2012|
|Publishing Institution:||Univ.-Bibliothek Frankfurt am Main|
|Tag:||chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon nanowires; vapor–liquid–solid mechanism|
|Institutes:||Biochemie und Chemie|
|Dewey Decimal Classification:||540 Chemie und zugeordnete Wissenschaften|
|620 Ingenieurwissenschaften und zugeordnete Tätigkeitenn|
This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
|Licence (German):||Creative Commons - Namensnennung 2.0|